Francisco Gamiz graduated in Physics with Honors (National Award of the Spanish Ministry of Education) in 1991 at the UGR and obtained the PhD degree (Extraordinary Award) in 1994. In 1991, he began his work of simulating semiconductor devices by the Monte Carlo method. In 1999 he visited the TJ Watson Research Center of IBM (USA). In 2000 and 2002 he coordinated two MINECO cooperation projects with the Technical University of Vienna (Austria). New Monte Carlo techniques were developed in collaboration with Prof. Asenov of Glasgow University (UK) to incorporate the effects of carrier quantization into device simulations. In 2003 he participated in the EU FP5 FET project “EXTRA: Extremely Fast Silicon Transistor Based On Carrier Velocity Modulation” with VTT (Finland), and the Universities of Tokyo and Wuppertal(Germany). In 2004, Prof.Gamiz coordinated the European project EUROSOI in EU-FP6. An outcome of EUROSOI project is the EUROSOI conferences series that since 2005 has been the forum for the discussion of SOI technology in Europe. Prof. Gamiz is the president of the Steering Committee of EUROSOI-ULIS conference. Also, in 2004 and within the FP6, it participated in the SINANO Network of Excellence project, the precursor of the current SINANO Institute that brings together the most important actors in European Nanoelectronics.

In FP7, Prof. Gamiz coordinates EUROSOI +, whose objective is the training of young researchers in SOI technology, as well as making it accessible to university groups and small companies through MPW (multiproject wafers) projects. In 2011 CEA-LETI and STMicroelectronics launched an offer of MPW in the FDSOI technology of 28nm thanks to the mediation of the EUROSOI + project. FP7 also participates in the European project NANOSIL. In 2006, a co-tutelle agreement is signed with Prof. Cristoloveanu in MINATEC through which several PhD students carry out long training stays in Grenoble. Since 2010, Prof. Gamiz has achieved six infrastructure projects from MINECO and Junta de Andalucia with total funding of more than € 6M, which has been used to set up the Laboratory of Nanoelectronics, Graphene, and 2D Materials (CITIC-UGR). In 2014, the Governing Board of the UGR appointed Prof.Gamiz as Director of Nanoelectronics Laboratory. In 2010, collaboration agreements were signed with SOITEC, IMEC, CEA-LETI, Tokyo Institute of Technology, IMEP-MINATEC, Glasgow University, GlobalFoundries, or Synopsys (UK). Prof. Gamiz has participated in European industrial projects with CATRENE or ECSEL labels: REACHING-22, PLACES2BE, and H2020-WAYTOGO-FAST. In 2008 Prof. Gamiz founded the Nanoelectronics research group. The combination in the same group of advanced fabrication facilities, advanced characterization techniques, and simulation tools has allowed the development of lines of great interest and social impact. The first research line is focused in the design of semiconductor memory cells. Eighteen (18) international patents have been filed in this field: USA, Japan, Korea, and Europe. Prof. Gamiz coordinated the H2020 European project REMINDER with a budget of € 4.5M and 9 partners from Europe and Korea. In 2018, a research contract is signed with Prof. Yong Tae Kim of the Korea Institute of Science and Technology, and a framework research agreement with National Chiao Tung University (NCTU) of Taiwan (Prof. Edward Chang). Prof.Gamiz is also advisor of the H2020 Marie Curie Global Fellowship Grants TRAPS2D and GO2NANO. Since November, 2021 Prof. Gamiz is Head of the Research Center for Information and Communication Technologies, CITIC-UGR. Prof. Gamiz is member of the Academia de Ciencias Matemáticas, Fisico-Quimicas y Naturales de Granada.

Carlos Sampedro received the M. Eng in Electronics Engineering and M.Sc. in Physics from UGR in 2001, and the Ph.D. degree from UGR in 2006. In 2001, he joined the University of Applied Sciences in Pforzheim, Germany. In 2003 he started as PhD candidate in the frame of two EU projects from FP5 and FP6 obtaining his PhD on device simulation in 2006 with the Doctor Europeus recognition and the PhD award. In 2004, he became Assistant Professor with the UGR in the Electronics and Computer Science Department. He was Guest Research in the Device Modelling group of the University of Glasgow in 2005. Since 2011, he is an Associated Professor with the UGR. During his post-doc period, his research interests include advanced numerical simulation and modelling of ultimate scaled multigate, advanced SOI and non-conventional devices and development of Multi-Subband Ensemble Monte Carlo tools. He has co-authored more than 40 papers published in major journals indexed in JCR (16 Q1, 19 Q2) and JSR with an impact factor h13. He co-authored 6 book chapters about SOI technology and simulation, and 80+ contributions in conference proceedings obtaining best paper award in EUROSOI2006 and EUROSOI-ULIS 2017. He has been invited speaker in several conferences and in the Universities of Glasgow and Santiago de Compostela. He participated in 30+ research projects belonging to different calls including 10 funded by the Spanish Government, 12 from regional authorities, 5 by the UGR and 7 by the EU. In this case, the projects correspond to FP5 (1), FP6 (2), FP7(2), and H2020 (2) being the UGR co-ordinator of EUROSOI (FP6), EUROSOI+(FP7) y REMINDER(H2020). He has coauthored different technical reports in the frame of these projects and been a member of REMINDER (H2020) Managemement Board. He has been investigator in charge in three projects for young researchers and in 5 projects from national and regional government including TEC2017-89800-R. He is a reviewer in several international journals including Applied Physics Letters, IEEE Elec. Dev. Lett., IEEE Trans. on Elec. Dev., Solid State Elec., and been guest editor in Solid State Elec. And Macromachines. He has made research stages at FH Pforzheim (Germany), Device Modeling Group of the University of Glasgow and Universidad de Santiago de Compostela. He has been in the organizing committee of several international conferences including EUROSOI 2005 and 2011, NanoTec 2011, ESSDERC/ESSCIRC 2010, DCIS 2016 and EUROSOI-ULIS 2018. In addition to his research in advanced simulation, where he has been supervisor of two PhDs, with the setting up of the Nanoelectronics and 2D materials Lab at the UGR, he is in charge of the structural characterization research line including AFM techniques and is involve in the development 2D material based nanosensors. He is IEEE Senior Member. He has been Students Vicedean in the Faculty of Science (2016-19) and, since 2019 he is the Director of the Knowledge Transfer Office at the UGR.

Carlos Marquez serves as Associate Professor with the Department of Electronics, University of Granada, Spain, since 2022. He received Bachelor’s degrees with Honors in Telecommunications and in Electronics Engineering from the University of Granada (UGR) in 2012 and 2013, respectively. In 2017, he obtained the PhD degree in Electronics (with Honors) also from the UGR.

His research interests include the study, design, fabrication, and characterization (both structural and electrical) of ground-breaking solid-state electronic devices which will support the next technological nodes beyond Silicon CMOS. He has authored or co-authored 23 peer-refereed JCR-journal publications (1/3 as first/corresponding author, >40% in Q1 and 1 in top #1 Nature Electronics IF>27) and 25 international conference contributions (2 invited). Dr. Marquez is also co-author of five book chapters in prestigious editorials like Springer or Elsevier. Moreover, Dr. Marquez is co-holder of two international patents (one pending) related to applications of FET devices as radiation sensors and as novel reconfigurable devices.

As postdoc he has been based in international excellence centers participating in the integration and processing of optoelectronics (III-V) and 2D materials such as graphene or TMDs to perform scalable semiconductor devices. To date, he has accumulated more than three years of international stays while he has actively collaborated both on competitive European (WAYTOGO-FAST and REMINDER) and Spanish national projects (TEC2017-89800R, TEC1014-59730R and PE16/0045) consolidating a strong international network. Complementary, he has received several competitive individual grants to support his research (>350k€): regional PhD grant, postdoctoral mobility grants (Spanish Government’s “Jose Castillejo” Grant, and “UGR-Plan Propio” Grant) to design and fabricate devices at Tyndall’s Cleanroom (Ireland); a “Juan de la Cierva-Formacion” fellowship to research in thin materials at Polytechnique University of Madrid in 2020 and recently, a Marie Curie Individual Global Fellowship to lead a project focused on the fabrication and integration of 2D electronic devices between University of Granada (Spain) and NCTU in Taiwan.

After my PhD in physics and my early post-doc positions devoted to statistical physics and complex networks, in 2005 I joined the Electronics Department at the University of Granada and focused my research interests on physics-based modelling and simulation of semiconductor electronic devices. I studied carrier transport properties in silicon devices on either bulk or SOI substrates and novel materials such as MoS2, employing a wide range of tools from commercial TCAD to atomistic DFT-based software and developing different Monte Carlo simulators including quantum effects.

Among the topics I studied along the last 17 years, I can highlight the following:

– Band structure effects on carrier distribution and mobility, employing different models from parabolic effective mass, non-parabolic corrections, k·p models and atomistic ones obtained through DFT.

– Scattering mechanisms in inversion layers, with the development of quantum-based models for SOI and multi-gate devices: confined phonon and polar phonon scattering, scattering due to charges multiple layers of different materials, surface roughness scattering.

– Carrier transport with an applied magnetic field, comparing the mobility extracted with magnetoresistance measurements to low-field mobility.

– Development of Multi-Subband Ensemble Monte Carlo simulators, used to study device behaviour taking into account the lateral quantum confinement, in one dimension for planar devices, and in two dimensions for 3D devices.

– Simulation of DRAM memory cells made of only one transistor without capacitor: A2RAM y Z2FET.

– DFT studies (Siesta, QuantumATK) of 2D materials: analysis the effects of strain and transversal electric fields on MoS2 bands tructure and modelling of charge distribution in multi-layer structures.

C. NAVARRO received his Ph.D. degrees in electrical engineering from the University of Granada, Granada (Spain), in 2014, and the University of Montpellier working at the Institute of Microelectronics, Electromagnetism and Photonics (IMEP-LAHC), Grenoble (France), in 2015. After a one-year postdoc position at CEA-LETI in Grenoble, he returned to the University of Granada where he was granted a Juan de la Cierva Incorporación research contract to work on 1T-DRAM cells. He became Assistant professor at the University of Granada in 2020 and was promoted to Associate Professor in 2021. He holds 2 patents on radiation sensors and reconfigurable devices and has authored or co-authored over 100 journal articles and conference abstracts. His current research interests include devising and characterizing novel SOI devices, the implementation of advanced capacitorless memory cells and innovative reconfigurable FETs